2.0a surface mount schottky barrier diodes and weee 2002/96/ec 1 of 2 features maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified mechanical data sd103a/b/cws-v k l m j c h ba sod-323 dim min max a 0.25 0.35 b 1.20 1.40 c 2.30 2.70 h 1.60 1.80 j 0.00 0.10 k 1.0 1.1 l 0.20 0.40 m 0.10 0.15 0 8 all dimensions in mm ? the sd103 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring ? this diode is also available in the mini-melf case with the type designations ll103a to ll103c, do35 case with the type designations sd103a to sd103c and sod123 case with type designations sd103aw-v to sd103cw-v ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steer- ing, biasing, and coupling diodes for fast switching and low logic level applications ? for general purpose applications ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec case: sod323 plastic case weight: approx. 4.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parameter test condition part symbol value unit peak reverse voltage sd103aws-v v rrm 40 v sd103bws-v v rrm 30 v SD103CWS-V v rrm 20 v power dissipation p tot 200 1) mw single cycle surge 10 s square wave i fsm 2a parameter test condition part symbol min ty p. max unit leakage current v r = 30 v sd103aws-v i r 5a v r = 20 v sd103bws-v i r 5a v r = 10 v SD103CWS-V i r 5a forward voltage drop i f = 20 ma v f 370 mv i f = 200 ma v f 600 mv diode capacitance v r = 0 v, f = 1 mhz c d 50 pf reverse recovery time i f = i r = 50 ma to 200 ma, recover to 0.1 i r t rr 10 ns 1) valid provided that electrodes ar e kept at ambient temperature
figure 1. typical variation of forward current vs. forward voltage figure 2. typical high current forward conduction curve 1 8 4 88 0.01 1000 100 0.1 1 10 0 0.4 0.6 0. 8 1.0 0.2 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 4 8 9 4 5 3 2 0 1 0.5 1.0 0 1.5 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) d u ty cycle = 2 % t p = 300 ms figure 3. typical variation of reverse current at various temperatures figure 4. diode capacitance vs. reverse voltage 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 v - re v erse v oltage ( v ) i r - re v erse c u rrent ( a) r 200 8 4 75 c 50 c 25 c 100 c t am b = 125 c 1 8 491 10 20 30 40 050 c- diode capacitance (pf) d v r - re v erse v oltag e ( v ) 100 10 1 figure 5. blocking voltage deration vs. temperature at various average forward currents t am b - am b ient temperat u re (c) 1 8 492 100 200 0 v r - re v erse v oltage ( v ) 30 10 40 20 0 50 = 400 ma i f 100 ma 200 ma 2of2
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